PHASE TRANSFORMATION AND RâT CHARACTERISTICS OF VACUUM ANNEALED VANADIUM OXIDE THIN FILMS
Y. L. WANG
M. C. LI
L. C. ZHAO
Polycrystalline vanadium oxide (VOx) thin films with mixed phases of V6O13 + VO2 (M) are deposited onto p-doped Si (100) substrates at 430Â°C using magnetron sputtering. By vacuum annealing on as-deposited VOx thin films at 450Â°C, at different annealing times we obtained nanoscale polycrystalline VOx thin films with two or more mixed phases. With the annealing time increasing, the phases of the films underwent the following transformation: V6O13 + VO2 (M) â VO2 (M) + VO2 (B) â VO2 (B) + VO2 (M) + V5O9 â V4O7 + V5O9. The surface of VOx thin films prepared in different conditions is of high quality with mean grain size ranging from 80 to 300 nm and the Ra being about 20nm. The lowest temperature coefficient of resistance at ambient temperature (20Â°C) of -2% K-1 is found in the VOx thin film annealed at 450Â°C for 8 h with mixed phases of VO2 (M) + VO2 (B), which can meet the needs of microbolometer materials.
Vanadium oxide, phase, vacuum annealing, temperature coefficient of resistance (TCR)
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