English, Article edition: THE EFFECTS OF HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD ON SHALLOW DONOR IMPURITIES IN GaAs/GaAlAs GRADED QUANTUM WELL E. KASAPOGLU; H. SARI; I. SÃKMEN

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Bookmark: http://trove.nla.gov.au/version/84963
Physical Description
  • article
Language
  • English

Edition details

Title
  • THE EFFECTS OF HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD ON SHALLOW DONOR IMPURITIES IN GaAs/​GaAlAs GRADED QUANTUM WELL
Author
  • E. KASAPOGLU
  • H. SARI
  • I. SÃKMEN
Physical Description
  • article
Notes
  • Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities in GaAs/​GaAlAs graded quantum well (GQW). We have found that the changes in donor binding energy in GQW strongly depend not only on the quantum confinement, but also on the hydrostatic pressure, on the direction of the electric field and on the impurity position.
  • Graded quantum well, hydrostatic pressure, 71.55.Eq, 71.55.-i
  • RePEc:wsi:srlxxx:v:12:y:2005:i:02:p:155-159
Language
  • English
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