STUDY OF THE STOICHIOMETRIC RATIO OF ONE-STEP ELECTRODEPOSITED CuInSe2 FILMS ON ITO/SODA-LIME GLASS
N. J. YAO
S. M. HUANG
J. B. CHU
H. B. ZHU
Y. W. CHEN
Copper indium diselenide (CuInSe2) thin films were grown on indiumâtin oxide (ITO)/soda-lime glass using a one-step cathodic electrodeposition process at potentials lower than -0.6 V vs SCE, and in the presence of a large excess of In3+. The source solution contained CuCl2, InCl3, and H2SeO3 complexed by citric acid. The concentration of InCl3 in the electrochemical bath affected the structure, composition, stoichiometric ratio, and morphological properties of electrodeposited films. CuInSe2 films with a chalcopyrite structure and quite good stoichiometry were directly electrodeposited from a solution of 20 mM InCl3, 5 mM CuCl2, and 8 mM H2SeO3. Annealing of these CuInSe2 films in the temperature range from 300Â°C to 500Â°C improves their crystallinity and increases their grain size. Good chalcopyrite CuInSe2 films with a (112) preferential orientation suitable for the production of efficient solar cells are obtained after annealing at 500Â°C. The formation mechanism of the ternary CuInSe2 compound during the electrodeposition process was discussed.
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