English, Article edition: PHOTOELECTRICAL PROPERTIES OF p-TYPE AND n-TYPE ELECTRICAL CONDUCTIVITY AMORPHOUS CARBON THIN FILMS FOR APPLICATION IN ECONOMICAL CARBON-BASED SOLAR CELLS M. RUSOP; T. SOGA; T. JIMBO

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Bookmark: http://trove.nla.gov.au/version/84826
Physical Description
  • article
Language
  • English

Edition details

Title
  • PHOTOELECTRICAL PROPERTIES OF p-TYPE AND n-TYPE ELECTRICAL CONDUCTIVITY AMORPHOUS CARBON THIN FILMS FOR APPLICATION IN ECONOMICAL CARBON-BASED SOLAR CELLS
Author
  • M. RUSOP
  • T. SOGA
  • T. JIMBO
Physical Description
  • article
Notes
  • The successful deposition of boron (B)-doped p-type (p-C:B) and phosphorous (P)-doped n-type (n-C:P) carbon (C) films, and fabrication of p-C:B on silicon (Si) substrate (p-C:B/​n-Si) and n-C:P/​p-Si cells by the technique of pulsed laser deposition (PLD) using graphite target is reported. The cells' performances are represented in the dark IâV rectifying curve and IâV working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/​cm2, 25°C). The open circuit voltage (Voc) and short circuit current density (Jsc) for p-C:B/​n-Si are observed to vary from 230â250 mV and 1.5â2.2 mA/​cm2, respectively, and to vary from 215â265 mV and 7.5â10.5 mA/​cm2, respectively, for n-C:P/​p-Si cells. The p-C:B/​n-Si cell fabricated using the target with the amount of B by 3 Bwt% shows highest energy conversion efficiency, η =​ 0.20%, and fill factor, FF =​ 45%, while, the n-C:P/​p-Si cell with the amount of P by 7 Pwt% shows highest energy conversion efficiency, η =​ 1.14%, and fill factor, FF =​ 41%. The quantum efficiencies (QE) of the p-C:B/​n-Si and n-C:P/​p-Si cells are observed to improve with Bwt% and Pwt%, respectively. The contributions of QE are suggested to be due to photon absorption by carbon layer in the lower wavelength region (below 750 nm) and Si substrates in the higher wavelength region. The dependence of B and P content on the electrical and optical properties of the deposited films, and the photovoltaic characteristics of the respective p-C:B/​n-Si and n-C:P/​p-Si heterojunction photovoltaic cells, are discussed.
  • Boron, phosphorus, carbon, carbon-based, heterojunction, photovoltaic, solar cell, pulsed laser deposition, graphite
  • RePEc:wsi:srlxxx:v:12:y:2005:i:03:p:343-350
Language
  • English
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