STUDIES ON THE HETEROJUNCTION STRUCTURE OF n-Si/p-NANOCRYSTALLINE DIAMOND FILM
An undoped p-type nanocrystalline diamond (NCD) film was grown by an electron assisted hot filament chemical vapor deposition (EA-HFCVD) technology on an n-type single-crystalline Si substrate to fabricate p-NCD/n-Si heterojunction. The structure and morphology of the NCD film, which was analyzed by Raman spectroscopy, X-ray diffraction (XRD), and scanning electron microscopy (SEM), showed that the film consisted of 40â60 nm polycrystalline nano-grains. The results showed that with EA-HFCVD method, not only an undoped NCD film with high conductivity but also a pân heterojunction diode between the NCD film and n-Si substrate was fabricated successfully. The p-NCD/n-Si heterostructure was also used for ultraviolet (UV) photodetector application. Operating at a bias voltage of 10 V, this photodetector showed a significant discrimination between UV and visible light, and the UV/visible-blind ratio was about three orders of magnitude.
Nanocrystalline diamond film, electrical properties, chemical vapor deposition
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