PHYSICAL PROPERTIES OBTAINED FROM MEASURED THERMAL PROFILES IN THE FILM/SUBSTRATE BIMATERIAL SYSTEM
R. D. MALDONADO
A. I. OLIVA
H. G. RIVEROS
The microelectronic devices are formed by a substrate that supports the functional thin film material. The thermal, electrical, and mechanical properties of the system depend strongly on the interfacial properties between a film and a substrate. The interfacial nature in a film/substrate system originates the thermal contact resistance (Rtc). We discuss the thermal and the electrical behavior in a film/substrate system (bimaterial system) making emphasis on the Rtc of the interface. Au/glass samples with different thicknesses were prepared by thermal evaporation for experimentation. The bimaterial system was heated by a DC electrical current to obtain thermal profiles. Film and substrate thermal profiles acquired with high resolution combined with a developed bimaterial model are used as an alternative method to estimate the Rtc value at atmospheric pressure, the electrical resistivity Ï, and the thermal resistive coefficient Î±r in the bimaterial system. The calculated Rtc values ranged from 7.7 Ã 10-4 to 1.2 Ã 10-3 m2 K/W for the Au/glass system, in good agreement with previously reported values. The Ï values obtained from the thermal profile data present a more reliable value due to the global character than the local values measured by the four-probe technique. Dependence on film thickness was also found in the Î±r coefficient determination.
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