English, Article edition: PREPARATION OF INDIUM TIN OXIDE FILMS BY RADIO FREQUENCY MAGNETRON SPUTTERING UNDER LOW VACUUM LEVEL H. B. ZHU; X. D. LI; S. Y. HUANG; ...

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Bookmark: http://trove.nla.gov.au/version/84174
Physical Description
  • article
Language
  • English

Edition details

Title
  • PREPARATION OF INDIUM TIN OXIDE FILMS BY RADIO FREQUENCY MAGNETRON SPUTTERING UNDER LOW VACUUM LEVEL
Author
  • H. B. ZHU
  • X. D. LI
  • S. Y. HUANG
  • C. X. JIN
  • Z. SUN
  • Y. W. CHEN
  • S. M. HUANG
Physical Description
  • article
Notes
  • Indium tin oxide (ITO) thin films were prepared by radio frequency (RF) magnetron sputtering and under a quite low vacuum level of 2.3 à 10-3 Pa. The sputtering was done in an Ar and O2 gas mixture at a temperature of 200°C. A ceramic In2O3:SnO2 target (10 wt% SnO2) was used. The microstructures of the films were investigated by a field emission scanning electron microscope (FESEM) and an X-ray diffractometer (XRD). X-ray photoelectron spectroscopy (XPS) was performed to characterize the composition of the films. ITO films with a high transparency in the visible wavelength range (80â95%) were obtained. The dependency of the electrical, optical and structural properties of ITO films on both the O2 flow ratio (O2/​(O2 + Ar)) and the working pressure was investigated. In the case of low working pressure (1 Pa), the more highly transparent and conducting films were produced at the lower O2 flow ratio. High working pressure (2 Pa) gave rise to low quality, low transparency and amorphous films. Under RF sputtering at low vacuum level, the main contribution to the chamber atmosphere is due to water vapor. Oxygen originating from water vapor dissociation induced by plasma plays the same role as an oxygen or water vapor flux usually intentionally introduced in the system in order to have good quality films.
  • Indium tin oxide, thin films, radio frequency magnetron sputtering, X-ray photoelectron spectroscopy, 68.55.Jk, 73.61.-r, 78.66.-w, 81.40.Ef
  • RePEc:wsi:srlxxx:v:13:y:2006:i:06:p:833-840
Language
  • English
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