English, Article edition: DENSITY OF SURFACE STATES IN Pd/SiGe/Si INTERFACE FROM CAPACITANCE MEASUREMENTS A. SELLAI; M. MAMOR; S. AL-HARTHI

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Bookmark: http://trove.nla.gov.au/version/84105
Physical Description
  • article
Language
  • English

Edition details

Title
  • DENSITY OF SURFACE STATES IN Pd/​SiGe/​Si INTERFACE FROM CAPACITANCE MEASUREMENTS
Author
  • A. SELLAI
  • M. MAMOR
  • S. AL-HARTHI
Physical Description
  • article
Notes
  • Pd/​Si0.9Ge0.1/​Si Schottky barrier diodes subjected to irradiation are characterized using capacitance and conductance measurements performed under forward and reverse bias while varying the temperature and frequency. The CâV technique has been used in particular to determine the carriers profile as well as the interface state density and its energy distribution.
  • Schottky barrier, interface states, capacitance spectroscopy
  • RePEc:wsi:srlxxx:v:14:y:2007:i:04:p:765-768
Language
  • English
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