THE RAMAN SPECTRA CHARACTERISTICS OF a-CNx FILMS GROWN ON QUARTZ SUBSTRATES BY NEWLY DEVELOPED SURFACE WAVE MICROWAVE PECVD
A. M. M. OMER
Amorphous carbon nitride (a-CNx) films were deposited on quartz substrates by newly developed surface wave microwave plasma chemical vapor deposition (SWMP-CVD) of alcohol camphoric carbon plasma source at room temperature. Then the a-CNx films were heat-treated at various annealing temperatures (AT) in the 100â500Â°C range. The effects of heat treatment on the structural modifications were studied by Visible-Raman spectroscopy through the evolution of D and G peaks. The spectral evolution observed on heat-treated a-CNx shows progressive formation of crystallites. Raman spectra have revealed the amorphous structure of as-grown a-CNx films and the growth of nanocrystallinity upon increase of AT. These structural changes were further correlated with optical band gap and fraction of sp3 bonded carbons present, derived respectively from the UV-visible and photoelectron spectroscopy. The wide range of optical absorption coefficient characteristics is observed depending on the AT. The optical band gap of as-grown a-CNx films is found to be approximately 2.8 eV; it gradually decreases to 2.5 eV for the films heat-treated at 300Â°C and then it decreases rapidly to 0.9 eV at 500Â°C. The results obtained are discussed and compared with the literatures.
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