THE PHYSICAL PROPERTIES OF XeCl EXCIMER PULSED LASER DEPOSITED n-C:P/p-Si PHOTOVOLTAIC SOLAR CELLS
This paper reports on the successful deposition of phosphorus (P)-doped n-type (p-C:P) carbon (C) films, and fabrication of n-C:P/p-Si cells by pulsed laser deposition (PLD) using graphite target at room temperature. The cells performances have been given in the dark IâV rectifying curve and IâV working curve under illumination when exposed to AM 1.5 illumination condition (100mW/cm2, 25Â°C). The n-C:P/p-Si cell fabricated using a target with the amount of P by 7 weight percentages (Pwt%) shows the highest energy conversion efficiency Î· = 1.14% and fill factor FF = 41%. The quantum efficiency (QE) of the n-C:P/p-Si cells are observed to improve with Pwt%. The dependence of P content on the electrical and optical properties of the deposited films and the photovoltaic characteristics of the n-C:P/p-Si heterojunction solar cell are discussed.
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