2005, English, German, Book, Illustrated edition: Fabrication and characterization of planar Gunn diodes for monolithic microwave integrated circuits / Simone Montanari. Montanari, Simone.

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Fabrication and characterization of planar Gunn diodes for monolithic microwave integrated circuits / Simone Montanari
 
Bookmark: http://trove.nla.gov.au/version/24581140
Physical Description
  • iv, 150 p. : ill. (some col.) ; 24 cm.
Published
  • Jülich : Forschungszentrum, Zentralbibliothek, c2005.
Language
  • English
  • German

Edition details

Title
  • Fabrication and characterization of planar Gunn diodes for monolithic microwave integrated circuits /​ Simone Montanari.
Also Titled
  • At head of title: Forschungszentrum Jülich GmbH, Institut für Schichten und Grenzflächen
Author
  • Montanari, Simone.
Other Authors
  • Forschungszentrum Jülich. Institut für Schichten und Grenzflächen.
Published
  • Jülich : Forschungszentrum, Zentralbibliothek, c2005.
Physical Description
  • iv, 150 p. : ill. (some col.) ; 24 cm.
Series
Subjects
Contents
  • Machine derived contents note: 1 Introduction 1
  • 1.1 Objectives of the dissertation 2
  • 1.2 Outline of the dissertation 3
  • 2 Device Physics /​ Theoretical basis 5
  • 2.1 Theory of the Gunn effect 5
  • 2.1.1 History 5
  • 2.1.2 The transferred-electron effect and the domain formation 6
  • 2.1.3 Domain Dynamics 11
  • 2.1.4 The small signal behaviour of a transferred-electron device 14
  • 2.2 Gunn diode with hot electron injectors 18
  • 2.2.1 Metal semiconductor Schottky contact injector 18
  • 2.2.2 Graded gap injector 21
  • 2.2.3 Resonant tunneling injector 23
  • 2.3 Gunn diode based oscillators 26
  • 2.3.1 Theory of two-port networks 26
  • 2.3.2 Negative differential conductance oscillators 31
  • 2.3.3 Gunn oscillation modes 31
  • 2.4 The thermal behaviour of a Gunn diode 36
  • 2.4.1 Analytical solution of the simplified static heat transfer problem 36
  • 2.4.2 Finite elemente simulations of the temperature distributions in a
  • Gunn diode 38
  • 3 III-V compound semiconductor material systems 43
  • 3.1 Group-III/​As and group-III/​N material systems 43
  • 3.1.1 GaAs, AlAs 44
  • 3.1.2 GaN, AIN 45
  • 3.2 GaAs, AlAs grown by MBE 46
  • 3.3 GaAs Gunn diode structures 47
  • 3.3.1 Graded Gap injector GaAs Gunn diodes 47
  • 3.3.2 Resonant tunneling injector GaAs Gunn diodes 48
  • 3.4 GaN grown by MOVPE 50
  • 3.5 GaN Gunn diode structures 50
  • 4 Experimental Methods 53
  • 4.1 Atomic Force Microscope (AFM) 53
  • 4.2 Scanning Electron Microscope (SEM) 55
  • 4.3 Hall measurements 55
  • 4.4 Capacitance-Voltage measurements 58
  • 4.5 TLM and CLM 59
  • 4.6 Short pulse DC measurements 61
  • 4.7 S-parameters measurements 61
  • 4.7.1 Network Analyzer Measurement systems 61
  • 4.7.2 Displaying data: Smith Chart 64
  • 5 Technology 67
  • 5.1 Mesa etching 67
  • 5.1.1 ECR-RIE of GaAs/​AlGaAs mesa. 68
  • 5.1.2 ECR-RIE of GaN mesa 70
  • 5.1.3 GaN nanocolumns: a topdown approach. 70
  • 5.2 Ohmic contacts 72
  • 5.3 Electrical isolation of the single Gunn diodes 73
  • 5.4 Polyimide planarization /​ passivation 74
  • 5.5 Deposition of the bond-pads and of the oscillator passive elements 75
  • 5.6 Air-bridge interconnection (optional step). 76
  • 6 Experimental results and discussion 81
  • 6.1 Gunn diode direct current behavior 81
  • 6.1.1 Contacts 81
  • 6.1.2 I-V characteristics of graded gap injector GaAs Gunn diodes 83
  • 6.1.3 Temperature dependant DC modelling of graded gap injector GaAs
  • Gunn diodes 85
  • 6.1.4 I-V characteristics of resonant tunnelling injector GaAs Gunn diodes 87
  • 6.1.5 I-V characteristics of GaN Gunn diodes 88
  • 6.1.6 100 ns pulse measurements: heat effects evidences 89
  • 6.2 Gunn diode high frequency behaviour 91
  • 6.2.1 Impedance measurements up to 50MHz 91
  • 6.2.2 High frequencies investigations of GaAs Gunn diodes 93
  • 6.2.3 Drift velocity computation and operation mode classification 96
  • 6.2.4 Estimation of the F and L-valley occupation 100
  • 6.2.5 Temperature dependance of the drift velocity 101
  • 6.3 Gunn diode based oscillators 102
  • 6.3.1 The Gunn diode cavity oscillator 102
  • 6.3.2 The planar low pass filter 103
  • 6.3.3 The planar resonant circuit 105
  • 6.3.4 The monolithic integrated voltage-controlled Gunn oscillator 109
  • 7 Conclusions 113.
Notes
  • Includes bibliographical references (p. 143-150)
Language
  • English
  • German
ISBN
  • 3893363963
Dewey Number
  • 621.381/​32
Libraries Australia ID
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